Laser induced changes of As.sub.50./sub.Se.sub.50./sub. nanolayers studied by synchrotron radiation photoelectron spectroscopy

0437221 - FZÚ 2015 RIV CH eng J - Článek v odborném periodiku
Kondrat, O. - Popovich, N. - Holomb, R. - Mitsa, V. - Lyamayev, V. - Tsud, N. - Cháb, Vladimír - Matolín, V. - Prince, K. C.
Laser induced changes of As₅₀Se₅₀ nanolayers studied by synchrotron radiation photoelectron spectroscopy.
Thin Solid Films. Roč. 520, č. 24 (2012), s. 7224-7229. ISSN 0040-6090. E-ISSN 1879-2731
Grant CEP: GA MŠMT(CZ) LC06058
Institucionální podpora: RVO:68378271
Klíčová slova: chalcogenide glass * photostructural changes * photoelectron spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.604, rok: 2012

The influence of near bandgap laser irradiation on the structure of the As50Se50 thin film has been investigated by synchrotron radiation photoelectron spectroscopy. The As 3d and Se 3d photoemission peaks of the irradiated sample show significant differences in shapes and positions in comparison with those obtained for non-irradiated amorphous film. The experimental data processing and quantifications are performed analyzing As 3d and Se 3d core-level components obtained by curve fitting. The relative contribution of the As and Se atoms in different chemical states to the whole As 3d and Se 3d signal, its structural origins as well as their relation to the As50Se50 nanolayers structure before and after laser irradiation is analyzed and discussed in detail.
Trvalý link: http://hdl.handle.net/11104/0240771