AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures

0436952 - FZÚ 2015 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Vanko, G. - Vojs, M. - Ižák, Tibor - Potocký, Štěpán - Choleva, P. - Marton, M. - Rýger, I. - Dzuba, J. - Lalinský, T.
AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures.
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. Bratislava: Slovak University of Technology, 2014 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 263-266. ISBN 978-1-4799-5474-2.
[International Conference on Advanced Semiconductor Devices and Microsystems /10./. Smolenice (SK), 20.10.2014-22.10.2014]
Grant CEP: GA ČR(CZ) GP14-16549P
Institucionální podpora: RVO:68378271
Klíčová slova: GaN membranes * diamond films * thermal management * MWCVD * SEM
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

In this work, we present an application of NCD layers as backside cooling for AlGaN/GaN heterostructures grown on Si substrates. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. We observed that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film.
Trvalý link: http://hdl.handle.net/11104/0240548