Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture

0436880 - FZÚ 2015 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Mikolášek, M. - Vojs, M. - Varga, Marián - Babchenko, Oleg - Ižák, Tibor - Marton, M. - Kromka, Alexander - Harmatha, L.
Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture.
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. Bratislava: Slovak University of Technology, 2014 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 37-40. ISBN 978-1-4799-5474-2.
[International Conference on Advanced Semiconductor Devices and Microsystems /10./. Smolenice (SK), 20.10.2014-22.10.2014]
Grant CEP: GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271
Klíčová slova: diamond films * nitrogen doping * Raman spectroscopy * electrical measurements
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The paper deals with electrical characterization of nanocrystalline diamond / ptype crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH4/CO2/H2 gas mixture during the deposition. The introduced nitrogen promoted amorphization instead of creating sp2 domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies.
Trvalý link: http://hdl.handle.net/11104/0240510