Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

0435666 - FZÚ 2015 RIV RU eng J - Článek v odborném periodiku
Bagraev, N.T. - Gets, D.S. - Kalabukhova, E.N. - Klyachkin, L.E. - Malyarenko, A.M. - Mashkov, V.A. - Savchenko, Dariia - Shanina, B.D.
Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures.
Semiconductors. Roč. 48, č. 11 (2014), s. 1467-1480. ISSN 1063-7826. E-ISSN 1090-6479
Grant CEP: GA MŠMT(CZ) LM2011029
Grant ostatní: SAFMAT(XE) CZ.2.16/3.1.00/22132
Institucionální podpora: RVO:68378271
Klíčová slova: electron paramagnetic resonance * electrically- detected electron paramagnetic resonance * 6H -SiC nanostructures * nitrogen-vacancy defect * point defect
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.739, rok: 2014

The results of investigation of electrically detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X band) for the identification of shallow and deep boron centers, NVSi defects, and isolated silicon vacancies (VSi), which are formed directly during the prep aration of planar nanostructures under conditions of silicon vacancy injection at the SiO2/n 6H SiC inter face without any subsequent irradiation, are presented. The prepared sandwich nanostructures are an ultra narrow p type quantum well, confined by δ barriers heavily doped with boron on an n 6H SiC surface, which are self ordered during pyrolytic oxide deposition and subsequent short time boron diffusion. The EDEPR data of point centers in sandwich nanostructures, prepared within the framework of Hall geometry, are recorded by measuring the field dependences of the magnetoresistance without an external cavity, microwave source and detector.
Trvalý link: http://hdl.handle.net/11104/0239487