Annealing of polycrystalline thin film silicon solar cells in water vapour at sub-atmospheric pressures

0434815 - FZÚ 2015 RIV CZ eng J - Článek v odborném periodiku
Pikna, Peter - Píč, Vlastimil - Benda, V. - Fejfar, Antonín
Annealing of polycrystalline thin film silicon solar cells in water vapour at sub-atmospheric pressures.
Acta Polytechnica. Roč. 54, č. 5 (2014), s. 341-347. ISSN 1210-2709. E-ISSN 1805-2363
Grant CEP: GA MŠMT 7E10061
GRANT EU: European Commission(XE) 240826 - PolySiMode
Grant ostatní: AVČR(CZ) M100101216
Institucionální podpora: RVO:68378271
Klíčová slova: passivation * water vapour * thin film solar cell * polycrystalline silicon (poly-Si) * multicrys- talline silicon (m-Si) * Suns-VOC
Kód oboru RIV: JE - Nejaderná energetika, spotřeba a využití energie

Thin film polycrystalline silicon (poly-Si) solar cells were annealed in water vapour at pressures below atmospheric pressure. The PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. The Suns-VOC method and a Lock-in detector were used to monitor the effect of water vapour on VOC of the solar cell during the whole passivation process (in-situ). The open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, the voltage response of the solar cell to the light flash used during the Suns-VOC measurements was well observable. The temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. In-situ observation proved that there was the required sensitivity to changing VOC at elevated temperatures during the process.
Trvalý link: http://hdl.handle.net/11104/0238805