Nanostructure based on the AlSb/InAs.sub.1-x./sub.Sb.sub.x./sub./AlSb deep quantum wells used for the two-band superlinear luminescence

0434791 - FZÚ 2015 CZ eng A - Abstrakt
Hulicius, Eduard - Mikhailova, M. P. - Ivanov, E.V. - Danilov, L.V. - Petukhov, A.A. - Kalinina, K.V. - Slobozhanyuk, S.I. - Zegrya, G.G. - Stojanov, N.D. - Yakovlev, Yu. P. - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Zíková, Markéta
Nanostructure based on the AlSb/InAs_1-xSb_x/AlSb deep quantum wells used for the two-band superlinear luminescence.
NANOCON 2014 Conference Proceedings. Ostrava: Tanger, 2014. ISBN 978-80-87294-55-0.
[International Conference NANOCON /6./. 05.11.2014-07.11.2014, Brno]
Grant CEP: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: deep QW * AlSb/InAsSb/AlSb * electroluminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The superlinear electroluminescence (SLEL) of the MOVPE structures based on AlSb/InAsSb/AlSb deep quantum wells (QWs) will be presented. Samples differing in the InAsSb active layer composition were prepared. Dependence of the electroluminescence spectra and optical power on the drive current was measured. Intensive two-band SLEL in the 0.5-0.8 eV photon energy range and optical power enhancement with the drive current at RT caused by the contribution of the additional electron-hole pairs generated at AlSb/InAsSb interface due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electron level in the InAsSb QW, were found. In our previous work the interfaces were grown as AlAs-like, while results presented here are measured on samples with InSb-like interfaces between barriers and QW. We have observed an intensive two-band SLEL and have we described the temperature dependence in the range 77-300 K.
Trvalý link: http://hdl.handle.net/11104/0238775