Modelling of SVCS PIN PECVD reactors for silicon solar cells

0434336 - FZÚ 2015 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Jirásek, Vít - Potocký, Štěpán - Poruba, A.
Modelling of SVCS PIN PECVD reactors for silicon solar cells.
Material analysis in vacuum. Bratislava: Slovenská vákuová spoločnosť, 2014 - (Michalka, M.; Vincze, A.; Veselý, M.), s. 118-124. ISBN 978-80-971179-4-8.
[School of Vacuum Technology /17./. Štrbské Pleso (SK), 02.10.2014-05.10.2014]
Grant CEP: GA TA ČR TA01020972
Institucionální podpora: RVO:68378271
Klíčová slova: PECVD * simulation * solar cells * homogeneity
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

In the silicon solar cells manufacturing process, plasma-enhanced chemical vapour depositions are used for the preparation of passivation and anti-reflection coatings. One of the most important requirements is to achieve a good homogeneity of the surface film both on the wafer and among the wafers in the whole load. In this contribution the optimization of process parameters aimed at achieving a good homogeneity by numerical modelling is illustrated. The modelling includes separately a part devoted to the plasma-chemical kinetics and the computational fluid dynamics describing a laminar fluid flow (Navier-Stokes equations), mass and energy balance. The positive effect of helium dilution on the homogeneity of prepared SiOX films was explained. The calculated results of plasma parameters for SiXNY deposition are compared with the SiOX deposition and the effect of process pressure is discussed.
Trvalý link: http://hdl.handle.net/11104/0238416