InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

0433511 - FZÚ 2015 RIV GB eng J - Článek v odborném periodiku
Hospodková, Alice - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Brůža, P. - Pánek, D. - Foltynski, B. - Hulicius, Eduard - Beitlerová, Alena - Heuken, M.
InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study.
Nanotechnology. Roč. 25, č. 45 (2014), "455501-1"-"455501-6". ISSN 0957-4484. E-ISSN 1361-6528
Grant CEP: GA TA ČR TA01011017; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: III-nitrides * scintilator * radioluminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.821, rok: 2014

InGaN/GaN multiple quantum well (MQW) structure was prepared MOVPE and characterized by fine XRD measurements. Suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scaleswas demonstrated. The photoluminescent and radioluminescent spectra were measured. the ratio of the intensity of quantum well (QW) exciton luminescence to the intensity of the yellow luminescence (YL) band IQW/IYL depends strongly on the type and intensity of excitation.
Trvalý link: http://hdl.handle.net/11104/0237717