Characterisation of InAs/GaAs quantum dots by high resolution transmission electron microscopy

0432780 - FZÚ 2015 RIV CZ eng K - Konferenční příspěvek (tuzemská konf.)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
Characterisation of InAs/GaAs quantum dots by high resolution transmission electron microscopy.
Sborník příspěvků 4. studentské vědecké konference fyziky pevných látek. Praha: Česká technika-nakladatelství ČVUT, 2014 - (Aubrecht, J.; Dragounová, K.; Fojtíková, J.; Kalvoda, L.; Kučeráková, M.), s. 84-89. ISBN 978-80-01-05565-6.
[Student Scientific Conference on Solid State Physics /4./. Nové Hrady (CZ), 23.06.2014-27.06.2014]
Grant CEP: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034
Institucionální podpora: RVO:68378271
Klíčová slova: quantum dot * InAs * GaAsSb * high resolution transmission electron microscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The InAs/GaAs quantum dots (QDs) covered by GaAsSb strain reducing layer (SRL) have suitable properties for various applications. The GaAsSb SRL covering InAs QDs is used to improve the structure growth and the final parameters like QD density, QD size or photoluminesence. To obtain high-quality structure with required properties, the structure growth and final structure have to be deeply studied. Since the QDs and SRL system is surrounded by GaAs, the high resolution transmission electron microscopy (HRTEM) measurement was used to reveal the real material arrangement in a prepared sample. In this work we will discuss the results of following HRTEM measurements: flatness and thickness of prepared layers, QD size, atomic arrangement and composition of GaAsSb layer.
Trvalý link: http://hdl.handle.net/11104/0237147