Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen

0432629 - FZÚ 2015 RIV US eng J - Článek v odborném periodiku
Laguta, Valentyn - Buryi, Maksym - Rosa, Jan - Savchenko, Dariia - Hybler, Jiří - Nikl, Martin - Zazubovich, S. - Kärner, T. - Stanek, C.R. - McClellan, K.J.
Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen.
Physical Review. B. Roč. 90, č. 6 (2014), "064104-1"-"064104-12". ISSN 1098-0121
Grant CEP: GA MŠMT(CZ) LM2011029; GA ČR GAP204/12/0805
Grant ostatní: SAFMAT(XE) CZ.2.16/3.1.00/22132
Institucionální podpora: RVO:68378271
Klíčová slova: ESR * yttrium orthosilicates * ESEEM * charge traps * F⁺ centers
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.736, rok: 2014

We studied the processes of hole and electron trapping in yttrium orthosilicate Y2SiO5 single crystals using continuous wave and pulse electron spin resonance methods. We show that holes created by x-ray irradiation at low temperatures (T <80 K) are preferably self-trapped at Si-unbound oxygen ions in the form of O- centers. Under irradiation at higher temperatures (200–290 K), the holes are trapped at the Si-unbound oxygen ions in the vicinity of perturbing defects such as yttrium vacancies and impurity ions forming a variety of O- centers with thermal stability up to room and higher temperatures. We have also found that under x-ray irradiation at T < 60 K, electrons are preferably trapped in the vicinity of Si-unbound oxygen ion vacancies and partly trapped also at Mo impurity ions in the form of F+-type and Mo5+ centers, respectively.
Trvalý link: http://hdl.handle.net/11104/0237010