Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping

0432332 - FZÚ 2015 RIV DE eng J - Článek v odborném periodiku
Rath, J.K. - Prastani, C. - Nanu, D.E. - Nanu, M. - Schropp, R.E.I. - Vetushka, Aliaksi - Hývl, Matěj - Fejfar, Antonín
Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping.
Physica Status Solidi B. Roč. 251, č. 7 (2014), s. 1309-1321. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA ČR GA13-25747S; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: chalcogenides * chemical bath deposition * core-shell particles * quantum dots * solar cells * tin sulfide
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.469, rok: 2014

We present our recent study on SnS particles in the backdrop of significant developements that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performence is described. To further improve the performance of low-cost chalcogenide-based solar cells, we propose to employ a third-generation solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its current generation and efficiency. For this purpose SnS quantum dots (QD) embedded indium sulfide layer is developed. We address how to cap the QD surface for defect passivation and protection from ambient and the doping nature of the particles.
Trvalý link: http://hdl.handle.net/11104/0236727