Silicon carbide for chemical application prepared by SPS method

0432105 - ÚFP 2015 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Brožek, Vlastimil - Kubatík, Tomáš František - Vilémová, Monika - Mušálek, Radek - Mastný, L.
Silicon carbide for chemical application prepared by SPS method.
Proceedings of the 2nd International Conference on Chemical Technology. Prague: Czech Society of Industrial Chemistry, 2014 - (Kalenda, P.; Lubojacký, J.), s. 129-134. ISBN 978-80-86238-64-7.
[Mezinárodní chemicko-technologická konference/2./. Mikulov (CZ), 07.04.2014-09.04.2014]
Grant CEP: GA ČR GB14-36566G
Institucionální podpora: RVO:61389021
Klíčová slova: silicon carbide * spark plasma sintering * silicon carbide corrosion * impurities in silicon carbide
Kód oboru RIV: JG - Hutnictví, kovové materiály
www.icct.cz

Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C – principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC
Trvalý link: http://hdl.handle.net/11104/0236615