Study of silicon nanostructures by microscopic methods

0432079 - FZÚ 2015 CZ eng D - Dizertace
Hývl, Matěj
Study of silicon nanostructures by microscopic methods.
České vysoké učení technické v Praze, Fakulta jaderná a fyzikálně inženýrská. - Praha: ČVUT, 2014. 72 s.
Grant CEP: GA MPO FR-TI2/736; GA ČR GA13-12386S; GA MŠMT(CZ) LM2011026; GA ČR GB14-37427G
Grant ostatní: AVČR(CZ) M100101216
Institucionální podpora: RVO:68378271
Klíčová slova: silicon nanostructures * AFM * Raman intensity mapping * nanoindentation * radial junctions * Si NWs * LPC polycrystalline silicon thin films
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Silicon-based nanostructures belong among the most important structures for electronics and photovoltaics. In our work, we focus on description and studies of two types silicon nanostructures, primarily designed for the use as photovoltaic cells. Using microscopic methods such as atomic force microscopy (AFM) and Raman spectroscopy, we examine the electrical properties of radial junctions based on silicon nanowires and thin polycrystalline silicon films created by a liquid phase crystallization. With the help of conductive AFM and Kelvin probe force microscopy, we investigate mainly the electronic properties of grain boundaries in thin silicon films and individual radial junctions based on Si nanowires. We also examine the possibilities of nanoindentation technique for marking the sample in order to be able to characterize the sample with different methods on the same place, such as Raman intensity maps or confocal microscopy and AFM measurements.
Trvalý link: http://hdl.handle.net/11104/0236555