Monte-Carlo simulation of proximity effect in e-beam lithography

0429792 - ÚPT 2019 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Urbánek, Michal - Kolařík, Vladimír - Krátký, Stanislav - Matějka, Milan - Horáček, Miroslav - Chlumská, Jana
Monte-Carlo simulation of proximity effect in e-beam lithography.
NANOCON 2013. 5th International Conference Proceedings. Ostrava: TANGER Ltd, 2013, s. 723-726. ISBN 978-80-87294-44-4.
[NANOCON 2013. International Conference /5./. Brno (CZ), 16.10.2013-18.10.2013]
Grant CEP: GA MŠMT ED0017/01/01; GA MŠMT EE.2.3.20.0103; GA TA ČR TE01020233
Institucionální podpora: RVO:68081731
Klíčová slova: Monte–Carlo * proximity effect simulation * e–beam lithography
Obor OECD: Optics (including laser optics and quantum optics)

E–beam lithography is the most used pattern generation technique for academic and research prototyping. During this patterning by e–beam into resist layer, several effects occur which change the resolution of intended patterns. Proximity effect is the dominant one which causes that patterning areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state. This contribution deals with Monte Carlo simulation of proximity effect for various accelerating beam voltage (15 kV, 50 kV, 100 kV), typically used in e–beam writers. Proximity effect simulation were carried out in free software Casino and commercial software MCS Control Center, where each of electron trajectory can be simulated (modeled). The radial density of absorbed energy is calculated for PMMA resist with various settings of resist thickness and substrate material. At the end, coefficients of proximity effect function were calculated for beam energy of 15 keV, 50 keV and 100 keV which is desirable for proximity effect correction.
Trvalý link: http://hdl.handle.net/11104/0234836