Growth of silicon nanowires on ZnO thin film stimulated by VLS and PECVD processes for photovoltaic applications

0425863 - FZÚ 2014 VN eng C - Konferenční příspěvek (zahraniční konf.)
Pham, T.T. - Le, V.T.H. - Cu, T.S. - Stuchlíková, The-Ha - Hruška, Karel - Ledinský, Martin - Stuchlík, Jiří
Growth of silicon nanowires on ZnO thin film stimulated by VLS and PECVD processes for photovoltaic applications.
Proceedings of IWNA 2013, 4th International Workshop on Nanotechnology and Application. Ho Chi Minh City: Laboratory for Nanotechnology, VNU, 2013, s. 411-414.
[IWNA 2013 - 4th International Workshop on Nanotechnology and Application. Vung Tau (VN), 14.11.2013-16.11.2013]
Grant CEP: GA MŠMT LH12236
Institucionální podpora: RVO:68378271
Klíčová slova: silicon nanowires (Si-NWs) * PECVD * ZnO * VLS process * Sn
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

In this paper, we focus on Si-NWs which are fabricated on transparent conductive substrates by PECVD method using Sn as metal stimulated the catalyst process. The factors affecting the formation of Si-NWs such as plasma, temperature were examined. In particular, the influence of metal layers thickness on forming Sn nanoparticle catalysts was studied. Si-NWs properties were investigated by SEM and Raman spectroscopy. Our aim is using Si-NWs for nano structural solar cells fabrication.
Trvalý link: http://hdl.handle.net/11104/0231652