Modeling of thermal stress induced during the diamond-coating of AlGaN/GaN high electron mobility transistors

0425306 - FZÚ 2014 RIV US eng J - Článek v odborném periodiku
Jirásek, V. - Ižák, Tibor - Babchenko, Oleg - Kromka, Alexander - Vanko, G.
Modeling of thermal stress induced during the diamond-coating of AlGaN/GaN high electron mobility transistors.
Advanced Science, Engineering and Medicine. Roč. 5, č. 6 (2013), s. 522-526. ISSN 2164-6627
Grant CEP: GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271
Klíčová slova: gallium nitride * HEMT * nano-crystalline diamond * selective diamond growth
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
http://dx.doi.org/10.1166/asem.2013.1324.

A thermally-induced stress during the microwave-plasma-enhanced chemical vapor deposition of a thin nanocrystalline diamond (NCD) films on GaN/AlGaN heterostructures and their subsequent cooling off was simulated in the CFD-ACE+ software. The samples intended to use in HEMT (High Electron Mobility Transistor) devices were prepared by two different methods: (a) continuous diamond film deposition followed by selective etching and (b) the selective growth of patterned diamond films. The finite-element method on the axisymmetric geometry was used to calculate the thermal deformations of these two types of samples. The qualitative dependencies of the deformations on the diamond film thickness and the substrate material were found. The lowest stresses were found on the SiC substrate, thanks to its low thermal expansion and high Young modulus. The simulation results of the structure with continuous and selectively-grown patterned film were compared.
Trvalý link: http://hdl.handle.net/11104/0231205