Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used

0425203 - FZÚ 2014 CZ eng A - Abstrakt
Pham, T.T. - Stuchlík, Jiří - Stuchlíková, The-Ha - Hruška, Karel - Ledinský, Martin
Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used.
Sborník 8. české fotovoltaické konference. Rožnov pod Radhoštěm: Czech RE Agency, o.p.s, 2013.
[Česká fotovoltaická konference /8./. 14.05.2013-15.05.2013, Brno]
Grant CEP: GA ČR GA203/09/1088; GA MŠMT LH12236
Institucionální podpora: RVO:68378271
Klíčová slova: silicon nanowires (Si-NWs) * PECVD * ZnO * catalytic process * Sn
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We study the catalytic effect of Sn-NPs on the surface of ZnO thin film on the growth of Si-NWs during the deposition process of Si:H thin films at boundary parameters. We used PECVD method at two frequencies - 13,56 or 108.48 MHz with power 4 W. Precursor SiH4 was diluted by H2 or He. The deposition temperature 250 °C is already low. Morphology of Si-NWs has been observed by SEM, the structure of the deposited films was analysed by Raman spectrometry.
Trvalý link: http://hdl.handle.net/11104/0231111