Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used

0424992 - FZÚ 2014 AU eng C - Konferenční příspěvek (zahraniční konf.)
Pham, T.T. - Stuchlíková, The-Ha - Ledinský, Martin - Hruška, Karel - Le, V.T.H. - Stuchlík, Jiří
Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used.
ISPC - Proceedings International Symposium on Plasma Chemistry (ISPC 21). Cairn: IPCS International Plasma Chemistry Society, 2013. IPSC, 21. ISBN N.
[International Symposium on Plasma Chemistry (ISPC 21)/21./. Cairns Convention Centre (AU), 04.08.2013-09.08.2013]
Grant CEP: GA ČR GA203/09/1088; GA MŠMT LH12236
Grant ostatní: AVČR(CZ) M100101216; AVČR(CZ) M100101217
Institucionální podpora: RVO:68378271
Klíčová slova: Si:H thin film * ZnO * PECVD * catalytic effect * Si-NWs
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
http://www.ispc-conference.org/ispcproc/ispc21/ID396.pdf

A research some convenient structure of silicon thin film solar cells with higher solar energy conversion is at area of interest up to now. In this paper we focus on the fabrication and study the properties of Si:H thin film which was formed on the transparent conductive thin film ZnO. We study a possibilities how to deposit by PECVD technique with assistance of catalytic effect of Sn an optimal structure of Si:H thin film /amorphouse + microcrystalline + eventually with contain of Si nanowires
Trvalý link: http://hdl.handle.net/11104/0230960