Application of sum rule to the dispersion model of hydrogenated amorphous silicon

0424878 - FZÚ 2014 RIV CH eng J - Článek v odborném periodiku
Franta, D. - Nečas, D. - Zajíčková, L. - Ohlídal, I. - Stuchlík, Jiří - Chvostová, Dagmar
Application of sum rule to the dispersion model of hydrogenated amorphous silicon.
Thin Solid Films. Roč. 539, JUL (2013), s. 233-244. ISSN 0040-6090. E-ISSN 1879-2731
Institucionální podpora: RVO:68378271
Klíčová slova: optical constants * ellipsometry * spectrophotometry * a-Si:H * Urbach tail * localized states * sum rule
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.867, rok: 2013

Optical data obtained for a-Si:H films by ellipsometry and spectrophotometry in the wide photon energy range 0.046–8.9 eV are fitted using the analytical dispersion models based on the application of the sum rule. The models include all absorption processes ranging from phonon absorption in IR region to core electron excitations in X-ray region. They take into account the existence of extended and localized states of valence electrons and distinguish transitions to conduction band and higher energy electron states.
Trvalý link: http://hdl.handle.net/11104/0230860