Solar Cell Technology Handbook

0424738 - FZÚ 2014 RIV JP eng M - Část monografie knihy
Fejfar, Antonín
Nano-level characterization of silicon thin films and solar cells.
Solar Cell Technology Handbook. Tokyo: Ohmsha, 2013 - (Konagai, M.), s. 468-478. ISBN 978-4-274-21399-1
Grant CEP: GA MŠMT(CZ) LM2011026
Grant ostatní: AVČR(CZ) M100101217
Institucionální podpora: RVO:68378271
Klíčová slova: silicon * thin films * atomic force microscopy * photoresponse
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Thin film based solar cells are surprisingly complex devices, mainly due to their micro and nanostructure. The nanostructure may be due to naturally occurring heterogeneities, for example crystalline grains, grain boundaries, defects in microcrystalline silicon, CdTe or CIS layers). The nanostructure is often part of the solar cell design, for example in bulk heterojunction cells or dye sensitized cells. In novel types of the cells nanostructured electrodes or light trapping structures are often used to improve the photovoltaic conversion efficiency. Nanometer-scale characterization using the scanning probe methods can provide information not only about the structure, but also about the functionality such as dark and illuminated surface potential, dark and illuminated conductivity, dielectric constant etc. Here, the experiments based on atomic force microscopy with conductive cantilever used as local contact are reviewed for the case of mixed phase silicon thin films.
Trvalý link: http://hdl.handle.net/11104/0230767