Optical and structural properties of ZnO and Eu:ZnO thin films grown by Pulsed Laser Deposition

0424655 - FZÚ 2014 JP eng A - Abstrakt
Novotný, Michal - Guille, A. - Bulíř, Jiří - Fitl, Přemysl - Čížek, J. - Lančok, Ján - Guy, S. - Kužel, R.
Optical and structural properties of ZnO and Eu:ZnO thin films grown by Pulsed Laser Deposition.
JSAP-MRS Joint Symposia 2013. Kyoto: JSAP-MRS Joint Symposia 2013, 2013 - (Tabata, H.). JSAP-MRS-E-018-JSAP-MRS-E-018
[JSAP-MRS Joint Symposia 2013. 16.09.2013-20.09.2013, Kyoto]
Grant CEP: GA ČR(CZ) GAP108/11/1298; GA ČR(CZ) GAP108/11/0958; GA MŠMT(CZ) 7AMB12FR034
Grant ostatní: AV ČR(CZ) M100101271
Institucionální podpora: RVO:68378271
Klíčová slova: zinc oxide * europium * thin film * pulsed laser deposition * laser annealing * photoluminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
http://www.gakkai-web.net/gakkai/jsap/jsap_mrs/hp/images/temp/MRS_pro.pdf

Wurtzite ZnO is a wide band gap (Eg~3.37 eV) semiconductor with a large exciton binding energy of 60 meV at room temperature. It possesses several favorable properties,including good transparency, high electron mobility, and strong room-temperature luminescence. Those properties are used in several emerging applications in optoelectronics. In such application trivalent rare earth ions (RE3+) doped ZnO phosphors have been studied extensively during the last years, however the results are quite disappointing since the desired characteristic emission from RE3+ is weak under the indirect UV excitation of the ZnO host.
Trvalý link: http://hdl.handle.net/11104/0230704