Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography

0422836 - FZÚ 2014 RIV GB eng J - Článek v odborném periodiku
Wierzchowski, W. - Wieteska, K. - Klinger, D. - Sobierajski, R. - Pelka, J. B. - Zymierska, D. - Balcer, T. - Chalupský, Jaromír - Gaudin, J. - Hájková, Věra - Burian, Tomáš - Gleeson, A.J. - Juha, Libor - Sinn, H. - Sobota, D. - Tiedtke, K. - Toleikis, S. - Tschentscher, T. - Vyšín, Luděk - Wabnitz, H. - Paulmann, C.
Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography.
Radiation Physics and Chemistry. Roč. 93, Dec (2013), s. 99-103. ISSN 0969-806X. E-ISSN 1879-0895
Grant CEP: GA MŠMT ED1.1.00/02.0061; GA MŠMT EE.2.3.20.0087; GA ČR(CZ) GAP108/11/1312; GA ČR GAP208/10/2302; GA ČR GAP205/11/0571; GA MŠMT EE2.3.30.0057
Grant ostatní: ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087; AVCR(CZ) M100101221; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057
Institucionální podpora: RVO:68378271
Klíčová slova: silicon * XUV * FEL * ablation * X-ray topography * deformation fields
Kód oboru RIV: BH - Optika, masery a lasery
Impakt faktor: 1.189, rok: 2013

Silicon crystalline samples were exposed to intense single pulses of XUV radiation (λ=13.5 nm) what lead to melting and ablation of the surface material. The deformation field around craters along the whole thickness of silicon wafers was observed by means of the synchrotron transmission section topography using the beam perpendicular to the surface of the sample.
Trvalý link: http://hdl.handle.net/11104/0228967