Počet záznamů: 1  

Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

  1. 1.
    0422814 - FZÚ 2014 RIV DE eng J - Článek v odborném periodiku
    Ashcheulov, Petr - Šebera, Jakub - Kovalenko, Alexander - Petrák, Václav - Fendrych, František - Nesládek, M. - Taylor, Andrew - Vlčková Živcová, Zuzana - Frank, Otakar - Kavan, Ladislav - Dračínský, Martin - Hubík, Pavel - Vacík, Jiří - Kraus, I. - Kratochvílová, Irena
    Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects.
    European Physical Journal B. Roč. 86, č. 10 (2013), , "443-1"-"443-9". ISSN 1434-6028. E-ISSN 1434-6036
    Grant CEP: GA TA ČR TA01011165; GA ČR(CZ) GAP304/10/1951; GA MŠMT(XE) LM2011019; GA ČR GA13-31783S; GA MŠMT(CZ) LD11076
    GRANT EU: European Commission(XE) 238201 - MATCON
    Institucionální podpora: RVO:68378271 ; RVO:61388955 ; RVO:61388963 ; RVO:61389005
    Klíčová slova: polycrystalline diamond layer * conductivity B doping
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus; CG - Elektrochemie (UFCH-W)
    Impakt faktor: 1.463, rok: 2013

    The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number of parameters affecting boron doped polycrystalline diamond film’s conductivity we focused on the role of boron atoms inside diamond grains in terms of boron contribution to the continuum of diamond electronic states. Using a combination of theoretical and experimental techniques (plane-wave Density Functional Theory, Neutron Depth Profiling, resistivity and Hall effect measurements, Atomic Force Microscopy and Raman spectroscopy) we studied a wide range of B defect parameters - the boron concentration, location, structure, free hole concentration and mobility. The main goal and novelty of our work was to find the influence of B defects (structure, interactions, charge localisation and spins) in highly B-doped diamonds - close or above the metal-insulator transition - on the complex material charge transport mechanisms.
    Trvalý link: http://hdl.handle.net/11104/0228948

     
     
Počet záznamů: 1  

  Tyto stránky využívají soubory cookies, které usnadňují jejich prohlížení. Další informace o tom jak používáme cookies.