Comparison of Aluminum Oxide Layers Deposited by PECVD and Pulsed Magnetron Sputtering for Dielectric Rear Side Passivation of Crystalline Silicon Solar Cells

0422461 - ÚPT 2014 RIV FR eng C - Konferenční příspěvek (zahraniční konf.)
Hégr, O. - Čech, P. - Kusko, M. - Kadlec, S. - Sobota, Jaroslav - Bařinka, R.
Comparison of Aluminum Oxide Layers Deposited by PECVD and Pulsed Magnetron Sputtering for Dielectric Rear Side Passivation of Crystalline Silicon Solar Cells.
Proceedings of 28th Europhean Photovoltaic Solar Energy Conference and Exhibition. Paris: WIP, 2013. ISBN 3-936338-33-7.
[European Photovoltaic Solar Energy Conference and Exhibition /28./. Paris (FR), 30.09.2013-04.10.2013]
Grant CEP: GA MPO FR-TI1/603
Institucionální podpora: RVO:68081731
Klíčová slova: Passivation * PECVD * Sollar Cell * Magnetron sputtering * Dielectric layer
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The aim of our work is to test other alternative technologies available in the Solartec's research laboratory. There are a standard PECVD technology and a unique OKS (Otto Klobe und Sohn) sputtering system, specially developed for photovoltaic applications. Sputtering system OKS is based on a batch process for 36 of 5“ Si substrates, where very good homogeneity of dielectric layers (±2%) is achieved. OKS sputtering equipment was specially developed for the pilot plant in order to create a viable alternative to existing PECVD and opportunities for a wider use of the system, especially for the formation of multilayer dielectric films suitable for colored solar cells.
Trvalý link: http://hdl.handle.net/11104/0228616