Počet záznamů: 1  

Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

  1. 1.
    0421578 - FZÚ 2014 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
    Mikhailova, M. - Zegrya, G. - Danilov, L. - Ivanov, E. - Kalinina, K. - Stoyanov, N. - Salikhov, Kh. - Yakovlev, Yu. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta
    Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells.
    INTEGRATED OPTICS: PHYSICS AND SIMULATIONS ( Proceedings of SPIE 8781). Vol. 8781. BELLINGHAM: SPIE, 2013 - (Cheben, P.; Čtyroký, P.; MolinaFernandez, I.), s. 1-9. ISBN 978-0-8194-9583-9. ISSN 0277-786X.
    [Conference on Integrated Optics - Physics and Simulations. Prague (CZ), 17.04.2013-18.04.2013]
    Grant CEP: GA ČR GA13-15286S
    Institucionální podpora: RVO:68378271
    Klíčová slova: quantum wells * ionization * interfaces * lasers * LED * Mid-IR * quantum efficiency * MOVPE
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    http://dx.doi.org/10.1117/12.2017124

    We report on the observation of superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb QW in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at temperatures of 77 and 300 K. It is shown that such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2-3 times in the current range 50-200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ΔEC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Theoretical calculation of the size quantization energy levels is presented, and possible cases of impact ionization are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers) operating in mid-IR spectral range, as well as for photovoltaic elements.
    Trvalý link: http://hdl.handle.net/11104/0227865

     
     
Počet záznamů: 1  

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