Raman spectroscopy of strongly doped CVD-graphene

0421294 - ÚFCH JH 2014 RIV DE eng J - Článek v odborném periodiku
Komínková, Zuzana - Kalbáč, Martin
Raman spectroscopy of strongly doped CVD-graphene.
Physica Status Solidi B. Roč. 250, č. 12 (2013), s. 2659-2661. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA ČR GAP204/10/1677; GA MŠMT LL1301
Institucionální podpora: RVO:61388955
Klíčová slova: electrochemical doping * polyelectrolyte layer * graphene
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 1.605, rok: 2013

Chemical vapor-deposition-grown graphene covered with a polyelectrolyte layer has been studied using Raman spectroscopy and in situ Raman spectroelectrochemistry. The doping of graphene leads to a shift of the Fermi level, which is reflected in changes of Raman spectra. A change of the Raman shift of the G band as a function of the electrode potential has been analyzed in this study to evaluate the doping level of graphene. The frequency shift of the G mode suggested an extreme doping of graphene (up 1014 charge carriers per cm2), without obvious damage of graphene.
Trvalý link: http://hdl.handle.net/11104/0227706