GaAsSb strain reducing layer covering InAs/GaAs quantum dots

0399637 - FZÚ 2014 CZ eng K - Konferenční příspěvek (tuzemská konf.)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Kubištová, Jana - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J. - Nikitis, F.
GaAsSb strain reducing layer covering InAs/GaAs quantum dots.
Studentská vědecká konference fyziky pevných látek /3./. Praha: Česká technika - nakladatelství ČVUT, 2013 - (Aubrecht, J.; Kalvoda, L.; Kučeráková, M.; Štěpánková, A.), s. 46-50. ISBN 978-80-01-05344-7.
[Studentská vědecká konference fyziky pevných látek /3./. Krkonoše (CZ), 28.06.2013-02.07.2013]
Grant CEP: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: quantum dot * strain reducing layer * InAs * GaAsSb
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

GaAsSb is often used as a capping material for InAs quantum dots (QDs) due to its suitable conduction band alignment and suppression of In segregation from QDs during the capping process.We have found out that during the GaAsSb layer growth, Sb atoms segregate above InAs QDs, which is proved by the AFM and HRTEM measurements. For higher amount of Sb in GaAsSb, the measured photoluminescence (PL) has longer wavelength, but if it is too high, the structure may become type II with decreased PL intensity. For thick GaAsSb layer, the PL intensity decreases, because only big QDs participate to the PL.
Trvalý link: http://hdl.handle.net/11104/0226876