Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes

0397887 - FZÚ 2014 RIV CA eng J - Článek v odborném periodiku
Olejníček, Jiří - Hubička, Zdeněk - Kšírová, Petra - Kment, Štěpán - Brunclíková, Michaela - Kohout, Michal - Čada, Martin - Darveau, S.A. - Exstrom, C.L.
Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes.
Journal of Advanced Oxidation Technologies. Roč. 16, č. 2 (2013), s. 314-319. ISSN 1203-8407
Grant CEP: GA MŠMT LH12045
Institucionální podpora: RVO:68378271
Klíčová slova: CIGS * HIPIMS * selenization * nanocrystals * solar energy * sputtering * thin films
Kód oboru RIV: BL - Fyzika plazmatu a výboje v plynech
Impakt faktor: 1.106, rok: 2013
http://www.ingentaconnect.com/content/stn/jaots/2013/00000016/00000002/art00015

CuIn1-xGaxSe2 (CIGS) thin films were prepared by the sputtering of metallic precursors Cu, In, Ga in HiPIMS or DC magnetron and subsequently selenized in an atmosphere of pure Se or Ar+Se. The average absorbed power and discharge current were the same in the HiPIMS and DC plasma. The basic aim of this work was to compare the structural properties of the CIGS films as a function of magnetron excitation mode and selenization thermal treatment conditions. Film characteristics were measured using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy and other techniques. All the CIGS films revealed the chalcopyrite crystal structure with a preferential (112) orientation. Only a very small influence of magnetron excitation mode on thin film properties was observed. On the other hand, selenization in Ar+Se atmosphere led to bigger grain size, better crystallinity and a significantly higher level of Ga substitution.
Trvalý link: http://hdl.handle.net/11104/0225487