Strain accommodation within porous buffer layers in heteroepitaxial growth

0396817 - ÚFE 2014 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Vaniš, Jan - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Piksová, K.
Strain accommodation within porous buffer layers in heteroepitaxial growth.
ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems. New York: IEEE, 2012 - (Hascik, S.; Osvald, J.), s. 235-238. ISBN 978-1-4673-1197-7.
[9th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM). Smolenice Castle (SK), 11.11.2012-15.11.2012]
Grant CEP: GA MŠMT 7AMB12GR034; GA ČR GAP108/10/0253
Institucionální podpora: RVO:67985882 ; RVO:68378271
Klíčová slova: Epitaxial growth * Gaas * Porous substrates
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika; JA - Elektronika a optoelektronika, elektrotechnika (FZU-D)

We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x) As layers
Trvalý link: http://hdl.handle.net/11104/0224518