Hydrogen detection with semimetal graphite-ZnO (InP,GaN) Schottky diodes

0396812 - ÚFE 2014 RIV CH eng C - Konferenční příspěvek (zahraniční konf.)
Yatskiv, Roman - Žďánský, Karel - Grym, Jan
Hydrogen detection with semimetal graphite-ZnO (InP,GaN) Schottky diodes.
Materials and Applications for Sensors and Transducers II ( Key Engineering Materials 543). Vol. 543. ZURICH: TRANS TECH PUBLICATIONS LTD, 2013 - (Hristoforou, E.; Vlachos, D.), s. 159-162. ISBN 9783037856161. ISSN 1013-9826.
[2nd International Conference on Materials and Applications for Sensors and Transducers, IC-MAST. Budapest (HU), 24.05.2012-28.05.2012]
Grant CEP: GA MŠMT(CZ) OC10021
Institucionální podpora: RVO:67985882
Klíčová slova: Graphite based Schottky diodes * Pt nanoparticles * Hydrogen sensor
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

We investigated Schottky diode hydrogen sensors prepared by printing colloidal graphite on ZnO, GaN, and InP substrates partly covered with Pt nanoparticles. A layer of Pt nanoparticles deposited by in-situ pulsed electrophoretic deposition from isooctane colloidal solutions was inserted between the semimetal graphite and the semiconductor surface to dissociate hydrogen molecules. Schottky diodes were investigated by the measurement of current-voltage characteristics and further tested for their sensitivity to hydrogen in a cell with a through-flow gas system. The sensing elements were sensitive to gas mixture with a low hydrogen concentration down to 1 ppm
Trvalý link: http://hdl.handle.net/11104/0224541