Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

0396793 - ÚFE 2014 RIV RO eng J - Článek v odborném periodiku
Reddy, N.K. - Devika, M. - Prashantha, M. - Rames, K. - Ivanova, Z.G. - Zavadil, Jiří
Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films.
Journal of Optoelectronics and Advanced Materials. Roč. 15, 3-4 (2013), s. 182-186. ISSN 1454-4164. E-ISSN 1841-7132
Grant CEP: GA ČR GAP106/12/2384
Institucionální podpora: RVO:67985882
Klíčová slova: Chalcogenide thin films * Optical properties * Photoinduced changes
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 0.563, rok: 2013

This study deals with the influence of Er-doping level and thermal annealing on the optical properties of amorphous Ge-Ga-S thin films. Nominal compositions of (GeS2)(75)(Ga2S3)(25) doped with high concentrations of 2.1 and 2.4 mol% Er2S3 (corresponding to 1.2 and 1.4 at% Er, respectively) have been chosen for this work. The results have been related to those obtained for the un-doped samples. The values of the refractive index, the absorption coefficient and optical band gap have been determined from the transmittance data. It has been found that the optical band gap of un-doped and 2.1 mol% Er2S3-doped films slightly increases with annealing temperature, whereas at 2.4 mol% Er2S3-doping level it is decreased. The dependences of the optical parameters on the erbium concentration and effect of annealing in the temperature range of 100-200 degrees C have been evaluated and discussed in relation to possible structural changes
Trvalý link: http://hdl.handle.net/11104/0224511