Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

0395842 - FZÚ 2014 RIV RU eng J - Článek v odborném periodiku
Mikhailova, M. P. - Andreev, I.A. - Ivanov, E.V. - Konovalov, G.G. - Grebentschikova, E.A. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří
Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy.
Semiconductors. Roč. 47, č. 8 (2013), 1037-1042. ISSN 1063-7826. E-ISSN 1090-6479
Grant CEP: GA ČR GA13-15286S
Institucionální podpora: RVO:68378271
Klíčová slova: GaSb * MOVPE * photodetector
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.705, rok: 2013

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6–0.8 eV are observed at temperatures of T = 77 and 300 K. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.
Trvalý link: http://hdl.handle.net/11104/0223736