Low-temperature relaxor state induced by epitaxial compression in PbSc.sub.0.5./sub.Nb.sub.0.5./sub.O.sub.3./sub. films

0394507 - FZÚ 2015 RIV US eng J - Článek v odborném periodiku
Tyunina, Marina - Levoska, J. - Janolin, P.-E. - Dejneka, Alexandr
Low-temperature relaxor state induced by epitaxial compression in PbSc_0.5Nb_0.5O₃ films.
Physical Review. B. Roč. 87, č. 22 (2013), "224107-1"-"224107-8". ISSN 1098-0121
Grant CEP: GA ČR GAP108/12/1941
Institucionální podpora: RVO:68378271
Klíčová slova: PbSc_0.5Nb_0.5O₃ films * biaxial epitaxial compression * relaxor state
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.664, rok: 2013

The use of high-performance perovskite-structure epitaxial relaxor ferroelectric films [S. H. Baek et al., Science 334, 958 (2011)] is hindered by the lack of knowledge of epitaxial effects therein. It is experimentally shown here that a biaxial epitaxial compression can favor the relaxor state over ferroelectricity. The absence of the ferroelectric transition and the existence of the low-temperature relaxor state are evidenced by a combination of x-ray diffraction, dielectric, polarization, and optical studies of PbSc0.5Nb0.5O3 films epitaxially grown on La0.5Sr0.5CoO3/MgO(001). This finding is beyond existing models of polarization in perovskite-structure epitaxial films and beyond the established ability to induce ferroelectricity by an epitaxial strain.
Trvalý link: http://hdl.handle.net/11104/0222708