3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

0392289 - ÚJF 2014 RIV GB eng J - Článek v odborném periodiku
Jakůbek, M. - Jakůbek, J. - Žemlička, J. - Platkevič, M. - Havránek, Vladimír - Semián, Vladimír
3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency.
Journal of Instrumentation. Roč. 8, č. 3 (2013), C03023. ISSN 1748-0221. E-ISSN 1748-0221.
[14th International Workshop on Radiation Imaging Detectors. Figueira da Foz, Coimbra, 01.07.2012-05.07.2012]
Grant CEP: GA TA ČR TA01010237; GA ČR(CZ) GA103/09/2101
Institucionální podpora: RVO:61389005 ; RVO:68378297
Klíčová slova: solid media * radiation damage * Pixelated detectors
Kód oboru RIV: BG - Jaderná, atomová a mol. fyzika, urychlovače; JL - Únava materiálu a lomová mechanika (UTAM-F)
Impakt faktor: 1.526, rok: 2013
http://iopscience.iop.org/1748-0221/8/03/C03023/pdf/1748-0221_8_03_C03023.pdf

Radiation damage in semiconductor sensors alters the response and degrades the performance of many devices ultimately limiting their stability and lifetime. In semiconductor radiation detectors the homogeneity of charge collection becomes distorted while decreasing the overall detection efficiency. Moreover the damage can significantly increase the detector noise and degrade other electrical properties such as leakage current. In this work we present a novel method for 3D mapping of the semiconductor radiation sensor volume allowing displaying the three dimensional distribution of detector properties such as charge collection efficiency and charge diffusion rate. This technique can visualize the spatially localized changes of local detector performance after radiation damage. Sensors used were 300 mu m and 1000 mu m thick silicon bump-bonded to a Timepix readout chip which serves as an imaging multichannel microprobe (256 x 256 square pixels with pitch of 55 mu m, i.e. all together 65 thousand channels). Per pixel energy sensitivity of the Timepix chip allows to evaluate the local charge collection efficiency and also the charge diffusion rate. In this work we implement an X-ray line scanning technique for systematic evaluation of changes in the performance of a silicon sensor intentionally damaged by energetic protons.
Trvalý link: http://hdl.handle.net/11104/0221246