Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

0392283 - FZÚ 2014 RIV NL eng J - Článek v odborném periodiku
Hospodková, Alice - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
Journal of Crystal Growth. Roč. 370, MAY (2013), s. 303-306. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA ČR GAP102/10/1201
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: band alignment * photoluminescence * strain reducing layer * quantum dot * MOVPE * InAs/GaAs
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.693, rok: 2013

We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs1-xSbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients in SRL, constant, increasing and decreasing during the growth. Both types of non-constant gradients help us to prevent transition of the InAs(QD)/GaAsSb(SRL) heterojunction from type I to type II, to increase emission wavelength and to retain high luminescence intensity of these types of QD structures. Comparison of photoluminescence of samples with different concentration gradients and similar average Sb concentration in SRLs is shown. The longest wavelength of type I ground state transition was achieved on sample with decreasing gradation of Sb content in SRL - 1399 nm (0.886 eV).
Trvalý link: http://hdl.handle.net/11104/0221191