0391172 - FZÚ 2013 CZ eng A - Abstrakt
Jirásek, Vít - Ižák, Tibor - Babchenko, Oleg - Kromka, Alexander - Vanko, G.
Modeling of thermal stress induced during the diamond-coating ofAlGaNGaN high electron mobility transistors.
Development of Materials Science in Research and Education, Book of Abstracts of the 22nd Joint Seminar. Praha: Czechoslovak Association for Crystal Growth (CSACG), 2012 - (Kožíšek, Z.; Nitsch, K.). s. 32-32. ISBN 978-80-260-2357-9.
[Joint Seminar – Development of materials science in research and education /22./. 03.09.2012-07.09.2012, Lednice]
Grant CEP: GA ČR(CZ) GBP108/12/G108
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: modeling * thermal stress * diamond
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

A thermally-induced stress during the microwave-plasma-enhanced chemical vapor deposition of a thin nanocrystalline diamond (NCD) films on GaN/AlGaN heterostructures and their subsequent cooling off was simulated in the CFD-ACE+ software.
Trvalý link: http://hdl.handle.net/11104/0220048