Controlling of properties of MOVPE InAs/GaAs quantum dot structures for device application

0391055 - FZÚ 2013 HU eng A - Abstrakt
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Vetushka, Aliaksi
Controlling of properties of MOVPE InAs/GaAs quantum dot structures for device application.
EuroNanoForum 2011 in partnership with Nanotech Europe - Coference - Exhibition - Matchmaking. 2011.
[EuroNanoForum 2011. 30. 05.2011-01.06. 2011, Budapest]
Grant CEP: GA ČR GAP102/10/1201; GA MŠMT LC510
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: InAs/GaAs * Quantum Dots
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Self-assembled InAs/GaAs Quantum Dots (QDs) grown on GaAs substrates are intensively investigated due to their useful fundamental optical properties and great potential device application based on mature GaAs technology – in high performance semiconductor lasers, LEDs, memories, and detectors. The final properties of QD structures are influenced by many echnological parameters such as the amount of deposited InAs and its growth rate, the length of the waiting time after InAs deposition, composition and growth rate of the capping layer etc.
Trvalý link: http://hdl.handle.net/11104/0219937