Shaped E-beam nanopatterning with proximity effect correction

0390977 - ÚPT 2013 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Urbánek, Michal - Kolařík, Vladimír - Matějka, Milan - Matějka, František - Bok, Jan - Mikšík, P. - Vašina, J.
Shaped E-beam nanopatterning with proximity effect correction.
NANOCON 2012, 4th International Conference Proceedings. Ostrava: TANGER Ltd, 2012, s. 717-722. ISBN 978-80-87294-32-1.
[NANOCON 2012. International Conference /4./. Brno (CZ), 23.10.2012-25.10.2012]
Grant CEP: GA MPO FR-TI1/576; GA MŠMT ED0017/01/01; GA TA ČR TE01020233
Institucionální podpora: RVO:68081731
Klíčová slova: e-beam writer * shaped beam * proximity effect correction
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Electron beam writer is a tool for writing patterns into a sensitive material (resist) in a high resolution. During the patterning, areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state (resist and the substrate). Consequently, this phenomenon, also called proximity effect, causes that the exposed pattern can be broader in comparison to the designed. In this contribution we present a software for proximity effect simulation and a software for proximity effect correction (PEC). The software is based on the model using the density of absorbed energy in resist layer and the model of resist development process. A simulation of proximity effect was carried out on binary lithography patterns, and consequently testing patterns were exposed with a corrected dose. As pattern generation, we used the e-beam writer TESLA BS 600 working with fixed energy 15keV and variable size rectangular shaped beam. The simulations of binary testing patterns and exposed patterns without PEC were compared. Finally, we compared the testing structures with PEC and without PEC, and we showed that the PEC tool works reliably for the e-beam writer BS 600.
Trvalý link: http://hdl.handle.net/11104/0219844