Microcrystalline silicon thin films studied by photoconductive atomic force microscopy

0390947 - FZÚ 2013 JP eng A - Abstrakt
Ledinský, Martin - Vetushka, Aliaksi - Stuchlík, Jiří - Rezek, Bohuslav - Fejfar, Antonín - Kočka, Jan
Microcrystalline silicon thin films studied by photoconductive atomic force microscopy.
ICANS 24. Program and Abstracts Book. Nara, 2011. s. 233-233.
[International Conference on Amorphous and Nanocrystalline Semiconductors /24./ - ICANS 24. 21.08.2011-26.08.2011, Nara]
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon (uc-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100× enhanced the current flows through the photosensitive uc-Si:H layer. The local current map and current–voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent.
Trvalý link: http://hdl.handle.net/11104/0219806