Počet záznamů: 1
Competition between thermally activated and tip-induced hopping of indium atoms on Si(100)
- 1.0390822 - FZÚ 2013 RIV US eng J - Článek v odborném periodiku
Setvín, Martin - Javorský, J. - Majzik, Zsolt - Sobotík, P. - Kocán, P. - Ošt'ádal, I.
Competition between thermally activated and tip-induced hopping of indium atoms on Si(100).
Physical Review. B. Roč. 85, č. 8 (2012), "081403-1"-"081403-4". ISSN 1098-0121
Grant CEP: GA AV ČR IAA100100905; GA ČR GD202/09/H041; GA ČR GAP204/10/0952
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: Si(100) * scanning tunneling microscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.767, rok: 2012
http://link.aps.org/doi/10.1103/PhysRevB.85.081403
The adsorption and dynamics of single indium atoms on a Si(100) surface were studied by means of scanning tunneling microscopy in a temperature range from 30 to 130 K. Single In adatoms are strongly influenced by a tip-surface interaction which is proportional to the tunneling current.
Trvalý link: http://hdl.handle.net/11104/0219661
Počet záznamů: 1