Atomic and electronic structure of N-terminated GaN(0001) (1 × 1) surface

0390686 - FZÚ 2013 RIV GB eng J - Článek v odborném periodiku
Romanyuk, Olexandr - Jiříček, Petr - Paskova, T.
Atomic and electronic structure of N-terminated GaN(0001) (1 × 1) surface.
Journal of Physics: Conference Series. Roč. 398, č. 1 (2012), s. 1-6. ISSN 1742-6588. E-ISSN 1742-6596.
[17th International School on Condensed Matter Pjysics (ISCMP): Open Problems in Condesed Matter Physics, BIiomedical Physics and their Applications. Varna, 02.09.2012-07..09.2012]
Grant CEP: GA ČR GPP204/10/P028
Grant ostatní: AV ČR(CZ) M100101201
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: clean surfaces * GaN * photoelectron diffraction * REELS * ab initio DFT * optical response
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
http://iopscience.iop.org/1742-6596/398/1/012013

The atomic and electronic structures of the polar GaN(000-1) surface were investigated by x-ray photoelectron diffraction (XPD) and ab initio density-functional theory (DFT) calculations. A well-ordered GaN(000-1) surface of a free-standing GaN wafer was prepared by sample annealing in a NH3 atmosphere. A N-terminated bare (1 x1) structure was confirmed. An electronic band structure was investigated by DFT calculations. The surface state at the top of the valence band was localized for a relaxed (1x1) structure. The energy loss function (ELF) was computed in the framework of the many-body perturbation theory. Plasmon loss peak positions were found to be in good agreement with reflection-electron energy loss spectroscopy (REELS) measurements.
Trvalý link: http://hdl.handle.net/11104/0219559