Etching effects of low temperature hydrogen plasma on encapsulated diamond transistors

0390080 - FZÚ 2013 RIV CZ eng J - Článek v odborném periodiku
Krátká, Marie - Neykova, Neda - Kromka, Alexander - Rezek, Bohuslav
Etching effects of low temperature hydrogen plasma on encapsulated diamond transistors.
Acta Universitatis Carolinae. Mathematica et Physica. Roč. 53, č. 2 (2012), s. 97-103. ISSN 0001-7140
Grant CEP: GA ČR GD202/09/H041; GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: encapsulated diamond transistors * hydrogen plasma
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We study etching effects of low temperature hydrogen plasma treatment (200–300 $C) in two different microwave plasma reactors (linear and focused plasma) on diamond solutiongated field-effect transistors with various polymers for encapsulation (MA-P, OFPR, SU8). Three-dimensional transistor microstructures (20 μm) are grown from nanocrystalline H-terminated intrinsic diamond byMW-CVD on Si/SiO2 substrates.
Trvalý link: http://hdl.handle.net/11104/0218981