Preparation and optical properties of thin films of the system Ge28-xGaxS27

0389775 - ÚMCH 2013 FR eng A - Abstrakt
Válková, S. - Wágner, T. - Bartoš, M. - Přikryl, J. - Vlček, Milan - Frumarová, Božena - Beneš, L. - Frumar, M.
Preparation and optical properties of thin films of the system Ge28-xGaxS27.
Book of Abstracts. Rennes: Université de Rennes 1, 2012. I-P27.
[International Symposium on Non-Oxide and New Optical Glasses /18./ - ISNOG 2012. 01.07.2012-05.07.2012, Saint-Malo]
Institucionální podpora: RVO:61389013
Klíčová slova: chalcogenide glasses * Ge-Ga-S * thin films
Kód oboru RIV: CA - Anorganická chemie

Because of the specific properties of chalcogenide glasses, they can be used as potential materials in many devices in electronics and optoelectronics. Therefore it is main issue of research at many academic groups [1]. Bulk samples with compositions Ge28S72, Ge26Ga2S72, Ge24Ga4S72 and Ge22Ga6S72 were prepared by direct synthesis from elements with high purity. The thin films of these glasses were prepared by two different methods. By thermal vacuum evaporation (VE) with three different chambers the three types of thin films were obtained. The forth type of films was prepared by pulsed lased deposition (PLD). The samples of thin films were characterized by X-Ray diffraction analysis (XRD), Energy Dispersive X-Ray analysis (EDX), Raman spectroscopy, UV/VIS spectroscopy and Variable Angle Spectral Ellipsometry (VASE). The different methods of preparation as well as the different chambers have a large influence to the properties of prepared thin films, such as thickness, refractive index or transmittance
Trvalý link: http://hdl.handle.net/11104/0218638