Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation

0389613 - FZÚ 2013 RIV GB eng J - Článek v odborném periodiku
Kůsová, Kateřina
Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation.
International Journal of Nanotechnology. Roč. 9, 8/9 (2012), s. 717-731. ISSN 1475-7435. E-ISSN 1741-8151
Grant CEP: GA AV ČR(CZ) IAA101120804; GA MŠMT LC510; GA AV ČR KJB100100903
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: silicon nanocrystals * surface passivation * photoluminescence * lasing
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.087, rok: 2012

In this contribution, we present a study of silicon nanocrystals as light sources. We compare the photoluminescence properties of silicon nanocrystals with three different types of surface passivation (hydrogen, silicon oxide and methyl-based capping), which has substantial impact. We show that with sufficiently small sizes and suitable surface passivation, the photoluminescence properties of silicon nanocrystals can reach a level comparable with direct-bandgap semiconductor nanocrystals (radiative lifetime of 10 ns, stable macroscopic quantum yield of 20%). Apart from studying photoluminescence properties on a macroscopic level, we also carried out microscopical room-temperature single-nanocrystal photoluminescence spectroscopy experiments.
Trvalý link: http://hdl.handle.net/11104/0218528