Crystal growth of Ce doped (Lu,Y).sub.3./sub.(Ga,Al).sub.5./sub.O.sub.12./sub. single crystal by the micro-puling-down method and their scintillation properties

0389313 - FZÚ 2013 RIV US eng J - Článek v odborném periodiku
Kamada, K. - Yanagida, T. - Pejchal, Jan - Nikl, Martin - Endo, T. - Tsutumi, K. - Fujimoto, Y. - Fukabori, A. - Yoshikawa, A.
Crystal growth of Ce doped (Lu,Y)₃(Ga,Al)₅O₁₂ single crystal by the micro-puling-down method and their scintillation properties.
IEEE Transactions on Nuclear Science. Roč. 59, č. 5 (2012), s. 2116-2119. ISSN 0018-9499. E-ISSN 1558-1578
Grant CEP: GA ČR GA202/08/0893
Grant ostatní: AV ČR(CZ) M100100910
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: crystals * luminescence * solid scintillation detectors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.219, rok: 2012

Ce-doped (Lu,Y)3(Ga,Al)5O12 single crystals were grown by the -PD method with RF heating system. In these crystals, 4f-5d emission is observed within 500-530 nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce:Lu2Y1(Ga,Al)5O12 series,the Ce0.2% Lu2Y1Ga3Al2O12 crystal showed the highest emission intensity. In order to determine light yield, the energy spectra were measured under 662 keV alpha-ray excitation and detection by an APD S8664-55(Hamamatsu). The light yield of Ce0.2%: Lu2Y1Ga3Al2O12sample was of about 30,000 photon/MeV. Dominant scintillation decay time was of about 50 ns.
Trvalý link: http://hdl.handle.net/11104/0218202