Relation of defects and grain boundaries to transport and photo-transport: solved and unsolved problems in microcrystalline silicon

0388925 - FZÚ 2013 RIV NL eng J - Článek v odborném periodiku
Kočka, Jan
Relation of defects and grain boundaries to transport and photo-transport: solved and unsolved problems in microcrystalline silicon.
Journal of Non-Crystalline Solids. Roč. 358, č. 17 (2012), s. 1946-1953. ISSN 0022-3093. E-ISSN 1873-4812.
[International Conference on Amorphous and Nanocrystalline Semiconductors /24./ (ICANS). Nara, 21.08.2011-26.08.2011]
Grant CEP: GA MŠMT(CZ) LC06040; GA MŠMT LC510
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: density of states * micro-crystalline silicon * transport
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.597, rok: 2012
http://www.sciencedirect.com/science/article/pii/S0022309311006028

Defects and grain boundaries play a crucial role in the dark and photo-transport of charge carriers. Surprisingly, the transport (trapping and recombination) in microcrystalline silicon is better understood at low temperatures, while room-temperature operation is of interest for real-life devices. In the first part of this review, the advantages of photo-transport techniques, used for the defect density evaluation, will be recapitulated and commented on.
Trvalý link: http://hdl.handle.net/11104/0217838