Nonlinear properties of the dipole layer in MOS-based hydrogen detectors

0387843 - ÚFE 2013 RIV DE eng J - Článek v odborném periodiku
Šrobár, Fedor - Procházková, Olga
Nonlinear properties of the dipole layer in MOS-based hydrogen detectors.
Physica status solidi C. Roč. 9, č. 7 (2012), s. 1687-1689. E-ISSN 1610-1642
Grant CEP: GA ČR GA102/09/1037
Institucionální podpora: RVO:67985882
Klíčová slova: Chemical sensors * Interface phenomena * Semiconductor devices
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Nonlinear dielectric properties of the dipole layer formed at the catalytic metal/insulator interface of MOS-based hydrogen sensors are investigated. A two-valley potential profile is used to model electronic states in adsorbed H atoms and to derive equation expressing dielectric polarization as a function of the applied field. Application of superposed static and alternating fields leads to third harmonic generation. The results could help to design diagnostic experiments for this kind of sensors
Trvalý link: http://hdl.handle.net/11104/0220340