Hydrogen sensors made on InP or GaN with electrophoretically deposited Pd or Pt nanoparticles

0387579 - ÚFE 2013 RIV PL eng J - Článek v odborném periodiku
Žďánský, Karel - Černohorský, Ondřej - Yatskiv, Roman
Hydrogen sensors made on InP or GaN with electrophoretically deposited Pd or Pt nanoparticles.
Acta Physica Polonica A. Roč. 122, č. 3 (2012), s. 572-575. ISSN 0587-4246. E-ISSN 1898-794X
Grant CEP: GA MŠMT(CZ) OC10021
Institucionální podpora: RVO:67985882
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 0.531, rok: 2012

High quality Schottky barriers were prepared by applying colloidal graphite on polished wafers of n-type InP or n-type GaN partly covered with palladium or platinum nanoparticles (NPs). The NPs were deposited by electrophoresis from colloid solutions prepared by reverse micelle technique. Schottky diodes showed current-voltage characteristics of high rectification and high barrier. Under the best conditions found heretofore the detection limits of Schottky diodes were below 1 ppm of hydrogen in nitrogen.
Trvalý link: http://hdl.handle.net/11104/0220072