Schottky bariers on InP and GaN made by deposition of colloidal graphite and Pd, Pt or bimetal Pd/Pt nanoparticles for H2-gas detection

0387460 - ÚFE 2013 RIV CH eng J - Článek v odborném periodiku
Žďánský, Karel - Yatskiv, Roman
Schottky bariers on InP and GaN made by deposition of colloidal graphite and Pd, Pt or bimetal Pd/Pt nanoparticles for H2-gas detection.
Sensors and Actuators B - Chemical. Roč. 165, č. 1 (2012), s. 104-109. E-ISSN 0925-4005
Institucionální podpora: RVO:67985882
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 3.535, rok: 2012

Schottky barriers on III-V compound semiconductors are still not well explored up to now. There were already reported Pd and Pt Schottky diode gas sensors using InP or GaN materials. However, reported sensing performances are surprisingly different. Thus, proper understanding of sensing mechanism is indispensable. We report on InP and GaN Schottky diode hydrogen sensors with low-leakage currents and high sensitivity, made by deposition of colloidal graphite and electrophoresis of Pd, Pt nebo bimetal Pd/Pt nanoparticles.
Trvalý link: http://hdl.handle.net/11104/0220075