Graphite/InP and graphite/GaN Schottky barrier hydrogen sensors with electrophoretically deposited Pd or Pt nanoparticles

0387292 - ÚFE 2013 RIV US eng J - Článek v odborném periodiku
Žďánský, Karel
Graphite/InP and graphite/GaN Schottky barrier hydrogen sensors with electrophoretically deposited Pd or Pt nanoparticles.
Nanoscale Research Letters. Roč. 7, č. 415 (2012), s. 4151-4156. ISSN 1931-7573. E-ISSN 1556-276X
Grant CEP: GA MŠMT(CZ) OC10021
Institucionální podpora: RVO:67985882
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 2.524, rok: 2012

By applying colloidal graphite, we prepared Schottky contacts on polished n-InP and on n-GaN wafers partly covered electrophoretically with nanoparticles of catalytic metals Pd or Pt. The nanoparticles were imaged by SEM, AFM and STM. Schottky barrier heights were virtually equal to energy of vacuum level alignments between InP or GaP and Pd or Pt (Schottky-Mott limits) - a good precondition for high sensitivity to hydrogen. Indeed, high sensitivity to hydrogen, with the detection limit below 1 ppm was proved
Trvalý link: http://hdl.handle.net/11104/0220245